| PART |
Description |
Maker |
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| FMMT591ATC |
40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| FMMT491 FMMT491TA |
Medium power NPN transistor in SOT23
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Diodes Incorporated
Diodes, Inc.
|
| ZXTP25040DFL ZXTP25040DFLTA |
40V, SOT23, PNP low power transistor
Advanced process capability has been used to achieve high current gain
|
ZETEX[Zetex Semiconductors]
Zetex Inc.
|
| MMBTA0511 MMBTA05-TP |
NPN Small Signal General Purpose Amplifier Transistors
TRANSISTOR NPN GP 60V SOT23 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components, Corp.
|
| SF_2N4395 BDY24B 2N4395 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
SEME-LAB[Seme LAB]
|
| ECG340 ECG330 ECG330W ECG331 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 500MA I(C) | TO-92VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 15A I(C) | TO-220
|
|
| 92PU57 92PU52 92PU45 92PU02 92PU51 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 800MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 40V的五（巴西）总裁| 800mA的一（c）|37VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-237VAR 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁|甲一（c）|37VAR
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-237VAR 晶体管|晶体管|叩| 40V的五（巴西）总裁| 800mA的一（c）|37VAR
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 2A I(C) | TO-237VAR
|
Flambeau, Inc.
GE Security, Inc.
|
| PBSS4240Y |
40V low VCEsat NPN transistor
|
Philips Semiconductors
NXP
|
| MMST2222A-7-F |
40V NPN SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
|
| FMMT634Q-15 |
100V NPN DARLINGTON TRANSISTOR IN SOT23
|
Diodes Incorporated
|
